Incoherent transport and pseudo-gap in HoBa2Cu3O7-δ single crystals with different oxygen content

被引：43

作者：

Vovk, R. V. ^{[2
]}

Obolenskii, M. A. ^{[2
]}

Zavgorodniy, A. A. ^{[2
]}

Goulatis, I. L. ^{[2
]}

Chroneos, A. I. ^{[1
]}

Pinto Simoes, V. M. ^{[3
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[2] Kharkov Natl Univ, UA-61077 Kharkov, Ukraine

[3] Convento Espirito Santo, Inst Super Dom Afonso 3, P-8100641 Loule, Portugal

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2009年 / 20卷 / 09期

关键词：

CONDUCTIVITY; STATE;

D O I：

10.1007/s10854-008-9806-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present experimental study the temperature dependence of the resistivity, along the c-axis is investigated in HoBa2Cu3O7-delta single crystals, with different oxygen contents. It is determined that, the boundaries of the twin domains are effective centers for the scattering of normal carriers. With the reduction of the oxygen content, there is an increase of the processes of the carrier localization. This in turn accompanies the transition from a pseudo-gap regime to the variable-range-hopping regime. For HoBa2Cu3O7-delta (in distinction to the YBa2Cu3O7-delta, compounds) the temperature dependence for the thermally activated hopping conductivity of the perpendicular resistivity is well described, by the universal "law of A1/2aEuroe.

引用

页码：858 / 860

页数：3

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