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A comparative study of surface passivation on AlGaN/GaN HEMTs

被引：117
作者：
Lu, W
Kumar, V
Schwindt, R
Piner, E
Adesida, I
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA
[3] ATMI Epitron, Phoenix, AZ 85027 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 09期
关键词：
passivation; GaN; AlGaN; HEMT; minimum noise figure;
D O I：
10.1016/S0038-1101(02)00089-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a Si3N4 layer as passivation layer, effects of surface passivation on device performances have been investigated. After passivation, devices exhibited better pinch-off characteristics and lower gate leakage current. For a device with a gate-length of 0.25 mum, the I-dss increased from 791 to 812.2 mA/mm and the peak extrinsic transconductance increased from 207.2 to 220.9 mS/mm, The f(T) and f(MAX) values decreased from 53 and 102.5 to 45.9 and 90.5 GHz, respectively, due to the increase of parasitic capacitances. Microwave noise measurements showed that devices exhibited 0.2-0.25 dB increase in minimum noise figure (NFmin) after passivation. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1441 / 1444
页数：4
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