Near-edge X-ray absorption fine structure spectroscopy of arcjet-deposited cubic boron nitride

被引：19

作者：

Berns, DH ^{[1
]}

Cappelli, MA ^{[1
]}

Shuh, DK ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV CHEM SCI, BERKELEY, CA 94720 USA

来源：

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

cBN; NEXAFS; arcjet PECVD; ion-assisted deposition;

D O I：

10.1016/S0925-9635(97)00156-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy was employed to help determine the structure of boron nitride films grown by bias-enhanced chemical vapor deposition in a low-density supersonic arcjet flow. BN films containing 0-90% cubic boron nitride were analyzed by NEXAFS and compared with c-BN and h-BN reference spectra. The mainly cubic films have been shown previously to be nanocrystalline, which leads to the inability to obtain structural information from Raman scattering spectra. However, with NEXAFS, the nanocrystalline nature of the films does not strongly affect the structural interpretation. It is shown that films deposited with a bias of -75 V are primarily sp(3) bonded. This high sp(3) bonding character agrees with previous measurements based on infrared transmission and reflectance spectroscopy, as well as X-ray photoelectron spectroscopy. (C) 1997 Elsevier Science S.A.

引用

页码：1883 / 1886

页数：4

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