Current induced degradation in GaAsHBT's

被引：15

作者：

Adlerstein, MG ^{[1
]}

Gering, JM ^{[1
]}

机构：

[1] Raytheon Co, Adv Device Ctr, Andover, MA 01810 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 02期

关键词：

AlGaAs emitters; GaAsHBT; HBT; InGaP emitters; InGaPHBT; junction damage; MTTF; reliability; stress tests;

D O I：

10.1109/16.822291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical model for observed current gain degradation in GaAs heterojunction bipolar transistors (HBT's) is suggested in terms of a parameterized mathematical description of accumulating junction damage. The model and measurement suggest a positive correlation between high initial values of de current gain and longer time to failure, Statistical analysis of accelerated stress failure data at 10 kA/cm(2) for InGaP/GaAs HBT's was conducted. The result shows projected median time to failure (MTTF) of more than 10(8) h at a junction temperature of 100 degrees C. The standard deviation is 0.6 and the activation energy is 1.5 eV.

引用

页码：434 / 439

页数：6

共 12 条

[1]

Adlerstein M. G., 1993, IEEE Microwave and Guided Wave Letters, V3, P145, DOI 10.1109/75.217209

[2] GAAS HBTS FOR MICROWAVE INTEGRATED-CIRCUITS [J].