High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode

被引：110

作者：

Li, N ^{[1
]}

Li, XW

Demiguel, S

Zheng, XG

Campbell, JC

Tulchinsky, DA

Williams, KJ

Isshiki, TD

Kinsey, GS

Sudharsansan, R

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

[2] USN, Res Lab, Photon Technol Branch, Washington, DC 20375 USA

[3] Spectrolab, Sylmar, CA 91381 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 03期

关键词：

high photocurrent; high-power photodiodes; microwave photonics; photodetectors; photodiode; radio-frequency (RF) photonics; uni-traveling-carrier (UTC) photodiode;

D O I：

10.1109/LPT.2004.823773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge compensation is utilized in an InGaAs-InP uni-traveling-carrier photodiode to mitigate the space-charge effect. A 20-mum-diameter photodiode achieved a bandwidth of 25 GHz and large-signal 1-dB compression current greater than 90 mA; the output power at 20 GHz was 20 dBm. A smaller similar to100-mum(2) photodiode exhibited a bandwidth of 50 GHz and large-signal 1-dB compression current greater than 50 mA. The maximum RF output power at 40 GHz was 17 dBm.

引用

页码：864 / 866

页数：3

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