MOVPE growth for an integrated InGaAs/InP PIN-HBT receiver using Zn-doped p(+)-InGaAs layers

被引：2

作者：

Eisenbach, A ^{[1
]}

Goldhorn, A ^{[1
]}

Kuphal, E ^{[1
]}

Mause, K ^{[1
]}

机构：

[1] DEUTSCH TELEKOM AG,RES CTR,D-64295 DARMSTADT,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00646-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Technological problems, requirements, and solutions for a PIN-HBT photoreceiver are investigated. MOVPE growth of the different layer structures for PIN-diodes and SHBTs require compromises to obtain the best performances of the devices within the integrated circuit. Growth and device technology are investigated and solutions for the integration are given using LP-MOVPE for growing the epitaxial layers for PIN-diodes and HBTs, respectively.

引用

页码：451 / 455

页数：5

共 6 条

[1] MONOLITHIC INTEGRATION OF A WAVE-GUIDE INGAAS/INP PIN PHOTODIODE WITH A LOCALLY ION-IMPLANTED JFET FOR RECEIVER OEIC APPLICATIONS [J].