Development of low dielectric constant ferroelectric materials for the ferroelectric memory field effect transistor

被引:37
作者
Fujimori, Y
Izumi, N
Nakamura, T
Kamisawa, A
Shigematsu, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 9B期
关键词
ferroelectric thin films; MFMIS FET; sol-gel; low dielectric constant; Sr2Nb2O7; Sr-2(Ta1-xNbx)(2)O-7; hysteresis;
D O I
10.1143/JJAP.36.5935
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper we discuss ferroelectric materials suitable for a metal-ferroelectric-metal-insulator-semiconductor feild effect transistor (MFMIS FET). It is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric layer. Films of Sr2Nb2O7 and Sr-2(Ta1-xNbx)(2)O-7 were prepared by the sol-gel method on Pt/IrO2 electrodes for an MFMIS FET. The ferroelectricities of Sr-2(Ta1-xNbx)(2)O-7 films were confirmed to be in the range of x = 0.1-0.3. In the case of x = 0.3, the largest remanent polarization was obtained in the hysteresis loop. The values of the remanent polarization and the coercive field are 0.5 mu C/cm(2) and 44kV/cm, respectively. The film has a low dielectric constant (epsilon(r) = 53). The characteristics of Sr-2(Ta1-xNbx)(2)O-7 thin films are suitable for MFMIS FET.
引用
收藏
页码:5935 / 5938
页数:4
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