Improved HgCdTe-technology for high performance infrared detectors

被引：5

作者：

Ziegler, J ^{[1
]}

Bruder, M ^{[1
]}

Cabanski, W ^{[1
]}

Figgemeier, H ^{[1
]}

Finck, M ^{[1
]}

Menger, P ^{[1
]}

Simon, T ^{[1
]}

Wollrab, R ^{[1
]}

机构：

[1] AIM AEG Infrarot Module GmbH, Heilbronn, Germany

来源：

INFRARED DETECTORS AND FOCAL PLANE ARRAYS VII | 2002年 / 4721卷

关键词：

infrared detector; HgCdTe-technology; HgCdTe-focal plane array; temperature cycling reliability; MTF improvement; yield;

D O I：

10.1117/12.478853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

To meet the demands for high performance HgCdTe detectors at high yield and producibility, key processes have been optimized and new approaches have been developed. By a superiour CdZnTe Bridgman growth process, dislocation densities < 1x10(5) cm(-2) in substrate and epitaxial layer are achieved for all substrates, ensuring high performance Focal-Plane-Arrays, particulary for lambda(CO) = 11,5 mum arrays. A new guard ring approach for planar diodes, created by a n(+)-region in pixel spacing area reduces pixel crosstalk and improves Modulation Transfer Function. For high thermal cycles of the FPA, the flip-chip-technique has been optimized, leading to > 2000 cycles for 640x512-FPA's. Producibility and reliability of AIM's MCT FPA technology are demonstrated.

引用

页码：242 / 251

页数：10

共 5 条

[1]

BRUDER M, SPIE C 1995, V2554, P137

[2]

CABANSKI WA, 2000, P SPIE, V4028

[3]

High performance linear detector modules [J].