Nucleation control of CVD growth silicon nanocrystals for quantum devices

We present a study of nucleation and organization of Si quantum dots (Si QDs) grown on insulating layers. The samples were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and scanning tunneling microscope (STM). We demonstrate that the chemical nature of the surface influences the Si QDs nucleation. We have organized the Si QDs using a buried array of dislocations obtained by molecular bonding of Si wafers. The electrical properties of individual Si QDs were investigated and memory effects were shown in C-MOS transistors integrating Si QDs within the gate oxide. (C) 2002 Elsevier Science B.V. All rights reserved.