Unbalanced facet output power and large spot size in 1.3 mu m tapered active stripe lasers

被引：6

作者：

Cho, HS

Park, KH

Lee, JK

Jang, DH

Kim, JS

Park, KS

Park, CS

Pyun, KE

机构：

[1] Compd. Semiconduct. Res. Department, Electronics Telecom. Res. Inst., Y., Taejon, 305-600

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 09期

关键词：

semiconductor quantum wells; semiconductor junction lasers;

D O I：

10.1049/el:19970504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unbalanced facet output power and large spot size in 1.3 mu m laser diodes is demonstrated using a laterally tapered active stripe. A slope efficiency as high as 0.46 W/A is obtained for the front facet of an uncoated LD. As a result of an unbalanced facet output power, the output power ratio of front to rear facets and the spot size of the LDs can be controlled simultaneously by tailoring the nontaper length in two sectional active geometries without an additional coating process.

引用

页码：781 / 782

页数：2

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