High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode

被引：15

作者：

Sun, D

Treat, DW

Bour, DP

机构：

[1] Xerox Palo Alto Research Cent, Palo Alto

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 16期

关键词：

semiconductor junction lasers; waveguide lasers;

D O I：

10.1049/el:19961003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high performance 660 nm metal cladding ridge waveguide laser diode was fabricated from a compressively strained In0.6Ga0.4P/(AlxGa1-x)(0.5)In0.5P single quantum well laser structure. The 4 mu m wide ridge waveguide diode had a threshold current of 31mA With a differential quantum efficiency of 45%/facet (slope efficiency of 0.85W/A) under CW operation. The characteristic temperature was 120K from 20 to 75 degrees C. The diode operated in a single transverse mode up to 22mW/facet.

引用

页码：1488 / 1490

页数：3

共 3 条

[1] STRAINED GAXIN1-XP/(ALGA)0.5IN0.5P HETEROSTRUCTURES AND QUANTUM-WELL LASER-DIODES [J].