Characteristics of the organic single-quantum-well devices fabricated by the doping method

被引：14

作者：

Huang, JS ^{[1
]}

Xie, ZY ^{[1
]}

Yang, KX ^{[1
]}

Li, CN ^{[1
]}

Zhao, Y ^{[1
]}

Liu, SY ^{[1
]}

机构：

[1] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 30023, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 1999年 / 16卷 / 12期

关键词：

D O I：

10.1088/0256-307X/16/12/023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A doping technique to fabricate an organic quantum-well electroluminescent device is demonstrated. The fabricated single-quantum-well device consists of the following structure: an N,N'-Bis(3-methyphenyl)-N,N'-diphenylbenzidine layer for hole transportation, an 8-(quinolinolate)-aluminum(Alq) layer for electron transportation and a light emitting layer of Alq doped with 5, 6,11,12-tetraphenylnaphthacene(rubrene). The dopant rubrene serves as a potential well, whereas the undoped Alq layer serves as a barrier layer. The efficiency and luminance of the device have been significantly improved. The observed phenomena of the spectral narrowing and the emission peak energy blue-shift are a result of the recombination of carriers from the quantized energy states.

引用

页码：922 / 924

页数：3

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