Optical and electrical properties of InN grown by radio-frequency reactive sputtering

被引：70

作者：

Motlan ^{[1
]}

Goldys, EM ^{[1
]}

Tansley, TL ^{[1
]}

机构：

[1] Macquarie Univ, Semicond Sci & Technol Labs, Sydney, NSW 2109, Australia

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 1-2期

关键词：

characterisation; radio-frequency; nitrides; semiconducting in compounds;

D O I：

10.1016/S0022-0248(02)01155-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on optical and electrical characterisation of InN thin films prepared by RF reactive sputtering of In target with pure nitrogen gas. The resistivity of the films is in the range of 10(-3) - 10(-2) Ohmcm, the mobility as high as 306 cm(-2) V-1 s(-1) and the carrier concentration is typically in the order of 10(19) cm(-3). Optical measurements show that films are highly degenerate with band gap values within 2.0-2.1 eV. Aging and annealing treatments indicate that physisorbed oxygen is eventually chemisorbed into the InN films, converting them into an oxynitride (InON) phase. This is observed through the increase of the band gap energy by about 0.2 eV in the samples aged for 6 months and an even greater increase of 0.8 eV in the samples annealed at 400degreesC. (C) 2002 Published by Elsevier Science B.V.

引用

页码：165 / 170

页数：6

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