In-plane dielectric properties of epitaxial 0.65Pb(Mg1/3Nb2/3)O3-0.35 PbTiO3 thin films in a very wide frequency range

被引：25

作者：

Wang, Y ^{[1
]}

Cheng, YL

Cheng, KC

Chan, HLW

Choy, CL

Liu, ZR

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Ctr Mat Res, Hong Kong, Hong Kong, Peoples R China

[3] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.1784517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The in-plane dielectric properties of epitaxial 0.65Pb(Mg1/3Nb2/3)O-3-0.35 PbTiO3 thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed. (C) 2004 American Institute of Physics.

引用

页码：1580 / 1582

页数：3

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