High spatial coherence vertical-cavity surface-emitting laser using a long monolithic cavity

被引：18

作者：

Deppe, DG

Huffaker, DL

机构：

[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas, Austin

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 03期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers;

D O I：

10.1049/el:19970129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high coherence vertical-cavity surface-emitting laser is described that uses a long monolithic cavity to achieve a large near-field spot size. The cavity length is similar to 10 mu m, and yields a stable far-field divergence half-angle of 1.6 degrees just above lasing threshold.

引用

收藏

页码：211 / 213

页数：3

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