Light-induced ultrafast phase transitions in VO2 thin film

被引:131
作者
Lysenko, S. [1 ]
Rua, A. J. [1 ]
Vikhnin, V. [1 ]
Jimenez, J. [1 ]
Fernandez, F. [1 ]
Liu, H. [1 ]
机构
[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA
关键词
VO2; exciton; ultrafast; laser excitation; phase transition; thin film;
D O I
10.1016/j.apsusc.2005.12.137
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vanadium dioxide shows a passive and reversible change from a monoclinic insulator phase to a metallic tetragonal rutile structure when the sample temperature is close to and over 68 degrees C. As a kind of functional material, VO2 thin films deposited on fused quartz substrates were successfully prepared by the pulsed laser deposition (PLD) technique. With laser illumination at 400 nm on the obtained films, the phase transition (PT) occurred. The observed light-induced PT was as fast as the laser pulse duration of 100 fs. Using a femtosecond laser system, the relaxation processes in VO2 were studied by optical pump-probe spectroscopy. Upon a laser excitation an instantaneous response in the transient reflectivity and transmission was observed followed by a relatively longer relaxation process. The alteration is dependent on pump power. The change in reflectance reached a maximum value at a pump pulse energy between 7 and 14 mJ/cm(2). The observed PT is associated with the optical interband transition in VO2 thin film. It suggests that with a pump laser illuminating on the film, excitation from the d(theta,epsilon) - state of valence band to the unoccupied excited mixed d(theta,epsilon)-pi* - state of the conduction band in the insulator phase occurs, followed by a resonant transition to an unoccupied excited mixed d(theta,epsilon)-pi* - state of the metallic phase band. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:5512 / 5515
页数:4
相关论文
共 17 条
[1]   STUDIES ON VANADIUM OXIDES .2. THE CRYSTAL STRUCTURE OF VANADIUM DIOXIDE [J].
ANDERSSON, G .
ACTA CHEMICA SCANDINAVICA, 1956, 10 (04) :623-628
[2]  
Azzam R.M.A., 1977, Ellipsometry and Polarized Light
[3]   Femtosecond laser excitation dynamics of the semiconductor-metal phase transition in VO2 [J].
Becker, MF ;
Buckman, AB ;
Walser, RM ;
Lepine, T ;
Georges, P ;
Brun, A .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2404-2408
[4]   Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].
Cavalleri, A ;
Dekorsy, T ;
Chong, HHW ;
Kieffer, JC ;
Schoenlein, RW .
PHYSICAL REVIEW B, 2004, 70 (16) :1-4
[5]   Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition -: art. no. 237401 [J].
Cavalleri, A ;
Tóth, C ;
Siders, CW ;
Squier, JA ;
Ráksi, F ;
Forget, P ;
Kieffer, JC .
PHYSICAL REVIEW LETTERS, 2001, 87 (23) :237401-1
[6]   Metal-insulator transitions [J].
Imada, M ;
Fujimori, A ;
Tokura, Y .
REVIEWS OF MODERN PHYSICS, 1998, 70 (04) :1039-1263
[7]   Hysteresis loop construction for the metal-semiconductor phase transition in vanadium dioxide films [J].
Klimov, VA ;
Timofeeva, IO ;
Khanin, SD ;
Shadrin, EB ;
Ilinskii, AV ;
Silva-Andrade, F .
TECHNICAL PHYSICS, 2002, 47 (09) :1134-1139
[8]   Excited state dynamics and semiconductor-to-metallic phase transition of VO2 thin film [J].
Liu, H ;
Vasquez, O ;
Santiago, VR ;
Díaz, L ;
Fernandez, FE .
JOURNAL OF LUMINESCENCE, 2004, 108 (1-4) :233-238
[9]   ELECTRON CORRELATIONS AND ELECTRON-LATTICE INTERACTIONS IN THE METAL-INSULATOR, FERROELASTIC TRANSITION IN VO2 - A THERMODYNAMICAL STUDY [J].
PAQUET, D ;
LEROUXHUGON, P .
PHYSICAL REVIEW B, 1980, 22 (11) :5284-5301
[10]   PASSIVE-Q SWITCHING AND MODE-LOCKING OF ER-GLASS LASERS USING VO2 MIRRORS [J].
POLLACK, SA ;
CHANG, DB ;
CHUDNOVKY, FA ;
KHAKHAEV, IA .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3592-3599