High-quality SiO2/Si interface formation and its application to fabrication of low-temperature-processed polycrystalline Si thin-film transistor

被引:33
作者
Higashi, S [1 ]
Abe, D [1 ]
Hiroshima, Y [1 ]
Miyashita, K [1 ]
Kawamura, T [1 ]
Inoue, S [1 ]
Shimoda, T [1 ]
机构
[1] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3928502, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 6A期
关键词
polycrystalline silicon; thin-film transistor; trap state density; laser crystallization; oxygen plasma; electron cyclotron resonance; plasma CVD;
D O I
10.1143/JJAP.41.3646
中图分类号
O59 [应用物理学];
学科分类号
摘要
Improvement of SiO2/Si interface quality and its effect on the performance low-temperature-processed polycrystalline silicon thin-film transistors (poly-Si TFTs) are investigated. Two oate SiO2 formation conditions for realizing the density of interface states (D-it) at mid-gap of 1.4 x 10(11) and 4.1 X 10(10) cm(-2) eV(-1) were applied to a 425 C TFT fabrication process using electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PLCVD), B reducing D-it, reduction of threshold voltage from 1.97 to 1.12 V, reduction of sub-threshold swing from 303 to 250 mV/decade and increase of mobility from 196 to 309 cm(2) V-1 s(-1) were observed. The analysis of TFT characteristics indicated the decrease of both deep and shallow level trap states. As a result, not only threshold voltage and sub-threshold swing, hill also the mobility of the poly-Si TFT was significantly improved. The results indicate that low-temperature process technologies for forming a high-quality SiO2/Si interface are important for next-generation high-performance poly-Si TFTs.
引用
收藏
页码:3646 / 3650
页数:5
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