Self-assembled ErAs islands in GaAs for THz applications

被引：19

作者：

Kadow, C ^{[1
]}

Jackson, AW

Gossard, AC

Bowers, JE

Matsuura, S

Blake, GA

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] CALTECH, Div Geol & Planetary Sci, Pasadena, CA 91109 USA

来源：

PHYSICA E | 2000年 / 7卷 / 1-2期

关键词：

ErAs islands; carrier dynamics; THz source;

D O I：

10.1016/S1386-9477(99)00314-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper concerns self-assembled ErAs islands in GaAs grown by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Pump-probe measurements indicate that the ErAs islands capture photogenerated carriers on a subpicosecond time scale. This together with the high resitivity of the material allows us to use it as a fast photoconductor. The performance of photomixer devices made from this material is discussed. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：97 / 100

页数：4

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