Self-assembled ErAs islands in GaAs for THz applications

被引:19
作者
Kadow, C [1 ]
Jackson, AW
Gossard, AC
Bowers, JE
Matsuura, S
Blake, GA
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] CALTECH, Div Geol & Planetary Sci, Pasadena, CA 91109 USA
来源
PHYSICA E | 2000年 / 7卷 / 1-2期
关键词
ErAs islands; carrier dynamics; THz source;
D O I
10.1016/S1386-9477(99)00314-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper concerns self-assembled ErAs islands in GaAs grown by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Pump-probe measurements indicate that the ErAs islands capture photogenerated carriers on a subpicosecond time scale. This together with the high resitivity of the material allows us to use it as a fast photoconductor. The performance of photomixer devices made from this material is discussed. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:97 / 100
页数:4
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