Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics

被引：117

作者：

Kadow, C ^{[1
]}

Fleischer, SB

Ibbetson, JP

Bowers, JE

Gossard, AC

Dong, JW

Palmstrom, CJ

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 22期

关键词：

D O I：

10.1063/1.125384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Several layers of ErAs islands separated by GaAs can be stacked on top of each other to form a superlattice. X-ray diffraction shows superlattice fringes from such samples. Pump-probe measurements indicate carrier capture times as short as 120 fs. These capture times are strongly correlated with the period of the superlattice. (C) 1999 American Institute of Physics. [S0003-6951(99)02848-X].

引用

页码：3548 / 3550

页数：3

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