SELF-ORGANIZING GROWTH OF ERBIUM ARSENIDE QUANTUM DOTS AND WIRES IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY

被引：43

作者：

SINGER, KE

RUTTER, P

PEAKER, AR

WRIGHT, AC

机构：

[1] UMIST,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] DEESIDE COLL,N E WALES INST,ADV MAT RES LAB,DEESIDE CH5 4BR,CLWYD,WALES

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.111041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium arsenide doped with erbium has been grown by molecular beam epitaxy. At growth temperatures in the range 540-605 degrees C, and with arsenic to gallium flux ratios of 2 and more, the erbium forms uniform crystalline microprecipitates of ErAs when the concentration exceeds 7 x 10(17) cm(-3). The diameter can be varied in the range 11-21 Angstrom by altering the growth temperature. Reducing the arsenic to gallium flux ratio to close to stoichiometry changes the growth mode to one yielding quantum wires aligned in the growth direction. Subtle changes in growth conditions lead to bifurcated structures, which we refer to as quantum trees.

引用

页码：707 / 709

页数：3

共 8 条

[1] 1.54-MU-M ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED GAAS AND GAAIAS GROWN BY MOLECULAR-BEAM EPITAXY [J].