MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS

被引：27

作者：

ZHU, JG ^{[1
]}

CARTER, CB ^{[1
]}

PALMSTROM, CJ ^{[1
]}

MOUNIER, S ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.102506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of GaAs/ErAs/GaAs epilayer heterostructures has been grown on (100)GaAs substrates by molecular beam epitaxy and characterized by high-resolution transmission electron microscopy and Rutherford backscattering measurements. Good epitaxy of the ErAs on the GaAs is demonstrated. The top GaAs layer is usually epitactically aligned with ErAs/GaAs in most areas; however, growth of (111)GaAs on (100)ErAs has also been observed. Small grains are present in the top GaAs layer which are twinned on {111} with respect to epitactic grains. These give rise to GaAs {122}/ErAs(100) phase boundaries. The {122} oriented GaAs grains do not continue throughout the GaAs growth but are overgrown by the neighboring epitactic grains.

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页码：1323 / 1325

页数：3

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