1.54-MU-M ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED GAAS AND GAAIAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：40

作者：

GALTIER, P

POCHOLLE, JP

CHARASSE, MN

DECREMOUX, B

HIRTZ, JP

GROUSSIN, B

BENYATTOU, T

GUILLOT, G

机构：

[1] THOMSON COMPOSANTS MICROONDES,F-91401 ORSAY,FRANCE

[2] INST NATL SCI APPL,F-69621 VILLEURBANNE,FRANCE

来源：

关键词：

D O I：

10.1063/1.102077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2105 / 2107

页数：3

共 14 条

[1] OSCILLATOR-STRENGTHS, QUANTUM EFFICIENCIES, AND LASER CROSS-SECTIONS OF YB-3+ AND ER-3+ IN III-V-COMPOUNDS
AUZEL, F
JEANLOUIS, AM
TOUDIC, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) : 3952 - 3955
[2] INTENSE AND SHARPLY STRUCTURED 1.54-MU-M ROOM-TEMPERATURE LUMINESCENCE OF ER-DOPED GAAS/ALGAAS STRUCTURES GROWN BY MBE
CHARASSE, MN
GALTIER, P
HUBER, AM
GRATTEPAIN, C
CHAZELAS, J
HIRTZ, JP
[J]. ELECTRONICS LETTERS, 1988, 24 (23) : 1458 - 1460
[3] GALTIER P, 1989, IN PRESS 16TH P INT
[4] GALTIER P, 1988, IN PRESS 15TH P INT
[5] HIRTZ P, UNPUB
[6] KLEIN PB, 1988, ELECTRON LETT, V24, P1503
[7] LOCALIZED CENTER LUMINESCENCE QUENCHING BY THE AUGER EFFECT
LANGER, JM
[J]. JOURNAL OF LUMINESCENCE, 1988, 40-1 : 589 - 590
[8] NAKAGOME H, UNPUB
[9] ERBIUM-DOPED GAAS LIGHT-EMITTING DIODE AT 1.54 MU-M
ROLLAND, A
LECORRE, A
FAVENNEC, PN
GAUNEAU, M
LAMBERT, B
LECROSNIER, D
LHARIDON, H
MOUTONNET, D
ROCHAIX, C
[J]. ELECTRONICS LETTERS, 1988, 24 (15) : 956 - 958
[10] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS
SMITH, RS
MULLER, HD
ENNEN, H
WENNEKERS, P
MAIER, M
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51