PRECIPITATES IN A (GA,IN)P-ER CRYSTAL

被引：10

作者：

JASIOLEK, G

KALINSKI, Z

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90556-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：583 / 586

页数：4

共 16 条

[1] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY [J].

BANTIEN, F ;

BAUSER, E ;

WEBER, J .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2803-2806

[2] PRECIPITATE IDENTIFICATION IN TI-DOPED, CR-DOPED AND NI-DOPED INP SINGLE-CRYSTALS [J].

COCKAYNE, B ;

MACEWAN, WR ;

HARRIS, IR ;

SMITH, NA .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :251-258

[3] THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE [J].

COCKAYNE, B ;

BROWN, GT ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :9-15

[4]

GILLESSEN K, 1980, CRYSTAL GROWTH PROPE, P49

[5] PHASE IDENTIFICATION IN FE-DOPED GAAS SINGLE-CRYSTALS [J].

HARRIS, IR ;

SMITH, NA ;

COCKAYNE, B ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1987, 82 (03) :450-458

[6] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M [J].

HAYDL, WH ;

MULLER, HD ;

ENNEN, H ;

KORBER, W ;

BENZ, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :870-872

[7]

HEINRICH KFJ, 1981, ELECTRON BEAM XRAY M, P101

[8] GROWTH AND DEFECTS OF IN-DOPED LEC GAP CRYSTALS [J].

HSU, JT ;

HUANG, TS ;

HON, MH .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) :365-372

[9]

HULLIGER F, 1980, HDB PHYSICS CHEM RAR, V4, P178

[10] IDENTIFICATION AND CHARACTERIZATION OF PRECIPITATES IN (GD,HO)-DOPED GASB CRYSTAL [J].

JASIOLEK, G ;

RACZYNSKA, J ;

GORECKA, J .

JOURNAL OF CRYSTAL GROWTH, 1986, 78 (01) :105-112

← 1 2 →