The dependence of free-carrier lifetime on erbium concentration has been measured in molecular-beam epitaxial GaAs epilayers doped with erbium. A gradual reduction in the lifetime is observed with increased dopant incorporation. For a high doping concentration in the range of 10(19) cm-3 or greater, a carrier lifetime of approximately 1 ps is obtained. Due to the high resistivity of these epilayers, they can also be used as a photoconductive switch, with good responsivity. This leads to new and novel applications for rare-earth doped III-V semiconductors.