PICOSECOND CARRIER LIFETIME IN ERBIUM-DOPED-GAAS

被引:29
作者
GUPTA, S [1 ]
SETHI, S [1 ]
BHATTACHARYA, PK [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
关键词
D O I
10.1063/1.108764
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dependence of free-carrier lifetime on erbium concentration has been measured in molecular-beam epitaxial GaAs epilayers doped with erbium. A gradual reduction in the lifetime is observed with increased dopant incorporation. For a high doping concentration in the range of 10(19) cm-3 or greater, a carrier lifetime of approximately 1 ps is obtained. Due to the high resistivity of these epilayers, they can also be used as a photoconductive switch, with good responsivity. This leads to new and novel applications for rare-earth doped III-V semiconductors.
引用
收藏
页码:1128 / 1130
页数:3
相关论文
共 9 条