PMOS thin gate oxide recovery upon negative bias temperature stress

被引：3

作者：

Akbar, MS ^{[1
]}

Agostinelli, M ^{[1
]}

Rangan, S ^{[1
]}

Lau, S ^{[1
]}

Castillo, C ^{[1
]}

Pae, S ^{[1
]}

Kashyap, S ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The recovery behavior of thin gate PMOS devices, under both static and dynamic stress conditions, has been investigated. It has been observed that the thin gate recovery characteristics after a negative bias temperature stress exhibit a universal behavior, irrespective of stress duration, stress electric fields and channel lengths. This universality is similar to what was previously observed for thick gate PMOS devices; however, the non-universal dependence on temperature is much different than reported in an earlier work. Thin gate recovery shows similar behavior under static and low frequency dynamic stress, but the recovery reduces under high frequency stress.

引用

页码：683 / 684

页数：2