Energy harvesting in silicon Raman amplifiers

被引：31

作者：

Fathpour, S. ^{[1
]}

Tsia, K. K. ^{[1
]}

Jalali, B. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期

关键词：

D O I：

10.1063/1.2335625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices. (c) 2006 American Institute of Physics.

引用

页数：3

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