Fiber-device-fiber gain from a sol-gel erbium-doped waveguide amplifier

被引:63
作者
Huang, W [1 ]
Syms, RRA
Yeatman, EM
Ahmad, MM
Clapp, TV
Ojha, SM
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, Opt & Semicond Devices Sect, London SW7 2BT, England
[2] Nortel Networks, Harlow CM17 9NA, Essex, England
基金
英国工程与自然科学研究理事会;
关键词
erbium; optical amplification; sol-gel; waveguides;
D O I
10.1109/LPT.2002.1012398
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An erbium-doped silica-on-silicon planar waveguide optical amplifier is described. The active core is a topographic guide formed from aluminophosphosilicate glass doped with erbium and ytterbium. The buffer is formed from silica deposited by thermal oxidation and the cladding from borophosphosilicate glass obtained by plasma-enhanced chemical vapor deposition. The use of low process temperatures allows relatively heavy doping and careful control of the core etching allows low background insertion losses to be obtained. Spontaneous emission and gain measurements are given and 5.4-dB fiber-device-fiber gain is demonstrated. using a 5-cm-long chip pumped using a 980-nm laser diode at 175-mW pump power.
引用
收藏
页码:959 / 961
页数:3
相关论文
共 11 条
[1]   Ion-exchanged planar lossless splitter at 1.5 mu m [J].
Camy, P ;
Roman, JE ;
Willems, FW ;
Hempstead, M ;
vanderPlaats, JC ;
Prel, C ;
Beguin, A ;
Koonen, AMJ ;
Wilkinson, JS ;
Lerminiaux, C .
ELECTRONICS LETTERS, 1996, 32 (04) :321-323
[2]   Integrated optics erbium-ytterbium amplifier system in 10-Gb/s fiber transmission experiment [J].
Delavaux, JMP ;
Granlund, S ;
Mizuhara, O ;
Tzeng, LD ;
Barbier, D ;
Rattay, M ;
SaintAndre, F ;
Kevorkian, A .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (02) :247-249
[3]   8-mW threshold Er3+-doped planar waveguide amplifier [J].
Ghosh, RN ;
Shmulovich, J ;
Kane, CF ;
deBarros, MRX ;
Nykolak, G ;
Bruce, AJ ;
Becker, PC .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (04) :518-520
[4]   Erbium doped optical-waveguide amplifiers on silicon [J].
Kik, PG ;
Polman, A .
MRS BULLETIN, 1998, 23 (04) :48-54
[5]  
SCKERL MW, 1999, P ECOC 99 NIC FRANC, P48
[6]   ERBIUM-DOPED PHOSPHOSILICATE GLASS WAVE-GUIDE AMPLIFIER FABRICATED BY PECVD [J].
SHUTO, K ;
HATTORI, K ;
KITAGAWA, T ;
OHMORI, Y ;
HORIGUCHI, M .
ELECTRONICS LETTERS, 1993, 29 (02) :139-141
[7]   Development of the SC-RTA process for fabrication of sol-gel based silica-on-silicon integrated optic components [J].
Syms, RRA ;
Holmes, AS ;
Huang, W ;
Schneider, VM ;
Green, M .
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1998, 13 (1-3) :509-516
[8]   Net optical gain at 1.53 mu m in Er-doped Al2O3 waveguides on silicon [J].
vandenHoven, GN ;
Koper, RJIM ;
Polman, A ;
vanDam, C ;
vanUffelen, JWM ;
Smit, MK .
APPLIED PHYSICS LETTERS, 1996, 68 (14) :1886-1888
[9]   Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 mu m [J].
Yan, YC ;
Faber, AJ ;
deWaal, H ;
Kik, PG ;
Polman, A .
APPLIED PHYSICS LETTERS, 1997, 71 (20) :2922-2924
[10]   Optical gain in Er-doped SiO2-TiO2 waveguides fabricated by the sol-gel technique [J].
Yeatman, EM ;
Ahmad, MM ;
McCarthy, O ;
Vannucci, A ;
Gastaldo, P ;
Barbier, D ;
Mongardien, D ;
Moronvalle, C .
OPTICS COMMUNICATIONS, 1999, 164 (1-3) :19-25