Numerical modeling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters

被引:143
作者
Altermatt, PP [1 ]
Schumacher, JO
Cuevas, A
Kerr, MJ
Glunz, SW
King, RR
Heiser, G
Schenk, A
机构
[1] Univ New S Wales, Ctr Photovolta Engn, Sydney, NSW 2052, Australia
[2] Inianga Consulting, Bondi Jct, NSW 2022, Australia
[3] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany
[4] Australian Natl Univ, Fac Engn & IT, Canberra, ACT 0200, Australia
[5] Spectrolab Inc, Sylmar, CA 91342 USA
[6] Univ New S Wales, Sch Comp Sci & Engn, Sydney, NSW 2052, Australia
[7] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland
关键词
D O I
10.1063/1.1501743
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have established a simulation model for phosphorus-doped silicon emitters using Fermi-Dirac statistics. Our model is based on a set of independently measured material parameters and on quantum mechanical calculations. In contrast to commonly applied models, which use Boltzmann statistics and apparent band-gap narrowing data, we use Fermi-Dirac statistics and theoretically derived band shifts, and therefore we account for the degeneracy effects on a physically sounder basis. This leads to unprecedented consistency and precision even at very high dopant densities. We also derive the hole surface recombination velocity parameter S-po by applying our model to a broad range of measurements of the emitter saturation current density. Despite small differences in oxide quality among various laboratories, S-po generally increases for all of them in a very similar manner at high surface doping densities N-surf. Pyramidal texturing generally increases S-po by a factor of five. The frequently used forming gas anneal lowers S-po mainly in low-doped emitters, while an aluminum anneal (Al deposit followed by a heat cycle) lowers S-po at all N-surf. (C) 2002 American Institute of Physics.
引用
收藏
页码:3187 / 3197
页数:11
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