Improvements in numerical modelling of highly injected crystalline silicon solar cells

被引:9
作者
Altermatt, PP [1 ]
Sinton, RA
Heiser, G
机构
[1] Univ New S Wales, Ctr Photovolta Engn, Sydney, NSW 2052, Australia
[2] Sinton Consulting, Boulder, CO 80303 USA
[3] Univ New S Wales, Sch Comp Sci & Engn, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
computer modelling; band-gap narrowing; c-Si solar cell;
D O I
10.1016/S0927-0248(00)00089-1
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, n(i) = 1.00 x 10(10) cm(-3), was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be dt scribed consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:149 / 155
页数:7
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