EXTENSION OF THE OPEN-CIRCUIT VOLTAGE DECAY TECHNIQUE TO INCLUDE PLASMA-INDUCED BANDGAP NARROWING

被引:10
作者
BANGHART, EK [1 ]
GRAY, JL [1 ]
机构
[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
关键词
D O I
10.1109/16.129090
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An expression for the open-circuit voltage decay is derived to include the effects of plasma-induced bandgap narrowing, as well as the effects of Fermi-Dirac statistics. As a result, the range of validity of the open-circuit voltage decay technique is extended to highly injected carrier densities in silicon in excess of 10(17) cm-3. The theory, when applied to data from the point-contact concentrator cell, in which highly injected carrier densities have been reported, provides a result consistent with recently determined values for the Auger coefficient and the intrinsic carrier concentration. In the course of the modeling, useful analytical expressions for both experimental and theoretical determinations of the bandgap narrowing have also been found.
引用
收藏
页码:1108 / 1114
页数:7
相关论文
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