APPROXIMATIONS FOR FERMI-DIRAC INTEGRALS, ESPECIALLY THE FUNCTION F1/2(ETA) USED TO DESCRIBE ELECTRON-DENSITY IN A SEMICONDUCTOR

被引：268

作者：

BLAKEMORE, JS

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(82)90143-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1067 / 1076

页数：10

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[1] APPROXIMATE EVALUATION OF FERMI-DIRAC FUNCTIONS
ARPIGNY, C
[J]. ASTROPHYSICAL JOURNAL, 1963, 138 (02) : 607 - &
[2] AN ANALYTICAL APPROXIMATION FOR THE FERMI-DIRAC INTEGRAL F3/2(ETA)
AYMERICHHUMET, X
SERRAMESTRES, F
MILLAN, J
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (10) : 981 - 982
[3] POLYNOMIAL APPROXIMATION OF FERMI INTEGRAL
BATTOCLE.FE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2162 - &
[4] APPROXIMATION OF FERMI-DIRAC INTEGRAL F1/2(ETA)
BEDNARCZYK, D
BEDNARCZYK, J
[J]. PHYSICS LETTERS A, 1978, 64 (04) : 409 - 410
[5] BEER AC, 1955, HELV PHYS ACTA, V28, P529
[6] A CORRECTION ON USE OF EINSTEIN RELATION IN DEGENERATE SEMICONDUCTORS
BERRY, WB
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02): : 188 - &
[7] THE PARAMETERS OF PARTIALLY DEGENERATE SEMICONDUCTORS
BLAKEMORE, JS
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (390): : 460 - 461
[8] INTRINSIC DENSITY NI(T) IN GAAS - DEDUCED FROM BAND-GAP AND EFFECTIVE MASS PARAMETERS AND DERIVED INDEPENDENTLY FROM CR ACCEPTOR CAPTURE AND EMISSION COEFFICIENTS
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 520 - 531
[9] BLAKEMORE JS, 1982, SEMICONDUCTOR STATIS
[10] BLAKEMORE JS, 1952, ELECTRON COMMUN, V29, P131