POLYNOMIAL APPROXIMATION OF FERMI INTEGRAL

被引：7

作者：

BATTOCLE.FE

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 12期

关键词：

D O I：

10.1109/PROC.1965.4544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2162 / &

共 6 条

[1] A CORRECTION ON USE OF EINSTEIN RELATION IN DEGENERATE SEMICONDUCTORS
BERRY, WB
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02): : 188 - &
[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3] FORSYTHE GE, 1957, SIAM J, V5, P74
[4] GRAY JW, THESIS OHIO STATE U
[5] EINSTEIN RELATIONSHIP + BOLTZMANN BOUNDARY CONDITIONS IN DEGENERATE SEMICONDUCTORS
LADE, RW
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (06) : 743 - &
[6] McDougall J., 1938, PHILOS T R SOC A, V237, P67, DOI [10.1098/rsta.1938.0004, DOI 10.1098/RSTA.1938.0004]