ENHANCEMENT OF BAND-TO-BAND AUGER RECOMBINATION BY ELECTRON-HOLE CORRELATIONS

被引：102

作者：

HANGLEITER, A

HACKER, R

机构：

[1] 4. Physikalisches Institut, Universität Stuttgart, D-7000 Stuttgart 80

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.65.215

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A huge enhancement of band-to-band Auger recombination in semiconductors by electron-hole correlations is found from a quantitative calculation. In contrast to earlier attempts, our calculation of the Coulomb correlation factors is valid for all temperatures and carrier densities, including the high-temperature and low-density case. Our results nicely explain recent carrier-lifetime measurements on silicon and show that Coulomb-enhanced Auger recombination poses an intrinsic upper limit to the carrier lifetime even at room temparature, a factor of 30 lower than previously assumed. © 1990 The American Physical Society.

引用

页码：215 / 218

页数：4

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