RECOMBINATION MECHANISM IN HEAVILY DOPED SILICON

被引：22

作者：

HAUG, A

SCHMID, W

机构：

[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER

[2] TECH UNIV BERLIN,FACHBEREICH PHYS,D-1000 BERLIN 12,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 07期

关键词：

D O I：

10.1016/0038-1101(82)90069-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：665 / 667

页数：3

共 24 条

[1] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].

ANTONCIK, E ;

LANDSBERG, PT .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527) :337-&

[2] AUGER-RECOMBINATION IN SI [J].

BECK, JD ;

CONRADT, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[4]

DZIEWIOR J, 1979, APPL PHYS LETT, V35, P140

[5]

HAUG A, 1978, SOLID STATE COMMUN, V28, P291, DOI 10.1016/0038-1098(78)90646-4

[6] CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION [J].

HAUG, A .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1281-1284

[7] FORMALISM FOR INDIRECT AUGER EFFECT .1. [J].

HILL, D ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1976, 347 (1651) :547-564

[8] CARRIER RECOMBINATION THROUGH DONORS-ACCEPTORS IN HEAVILY DOPED SILICON [J].

HU, C ;

OLDHAM, WG .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :636-639

[9] BAND-TO-BAND AUGER RECOMBINATION IN INDIRECT GAP SEMICONDUCTORS [J].

HULDT, L .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01) :173-&

[10]

HULDT L, 1979, APPL PHYS LETT, V35, P776, DOI 10.1063/1.90974

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