CARRIER RECOMBINATION THROUGH DONORS-ACCEPTORS IN HEAVILY DOPED SILICON

被引：10

作者：

HU, C ^{[1
]}

OLDHAM, WG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10-20 cm 2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.

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页码：636 / 639

页数：4

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