CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION

被引：99

作者：

HAUG, A

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(78)90193-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1281 / 1284

页数：4

共 14 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[2] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

[3]

HANSCH W, UNPUBLISHED

[4] AUGER RECOMBINATION OF ELECTRON-HOLE DROPS [J].

HAUG, A .

[5] PHONON-ASSISTED AUGER RECOMBINATION IN DEGENERATE SEMICONDUCTORS [J].

HAUG, A .

[6]

HAUG A, 1976, 13TH P INT C PHYS SE, P1106

[7]

Haug A., 1972, THEORETICAL SOLID ST, V2

[8] DOPING DEPENDENCE OF HOLE LIFETIME IN TYPE GAAS [J].

HWANG, CJ .

LANDSBERG, PT ;

LAL, P ;

RHYSROBERTS, C .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5426) :915-&

[10] CLASS OF N-ELECTRON PROCESSES IN SEMICONDUCTORS [J].

LANDSBERG, PT .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (05) :L111-L112