AUGER RECOMBINATION OF ELECTRON-HOLE DROPS

被引:37
作者
HAUG, A
机构
关键词
D O I
10.1016/0038-1098(78)90161-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:477 / 479
页数:3
相关论文
共 11 条
  • [1] AUGER-RECOMBINATION IN SI
    BECK, JD
    CONRADT, R
    [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95
  • [2] ELECTRON-HOLE DROPS IN GE-SI ALLOYS
    BENOITALAGUILLA, C
    VOOS, M
    PETROFF, Y
    [J]. PHYSICAL REVIEW B, 1974, 10 (12) : 4995 - 5002
  • [3] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE
    CONRADT, R
    AENGENHEISTER, J
    [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +
  • [4] INFLUENCE OF SCREENING EFFECTS ON AUGER RECOMBINATION IN SEMICONDUCTORS
    HAUG, A
    EKARDT, W
    [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (03) : 267 - 268
  • [5] PHONON-ASSISTED AUGER RECOMBINATION IN DEGENERATE SEMICONDUCTORS
    HAUG, A
    [J]. SOLID STATE COMMUNICATIONS, 1977, 22 (08) : 537 - 539
  • [6] FORMALISM FOR INDIRECT AUGER EFFECT .1.
    HILL, D
    LANDSBERG, PT
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1976, 347 (1651): : 547 - 564
  • [7] BAND-TO-BAND AUGER RECOMBINATION IN INDIRECT GAP SEMICONDUCTORS
    HULDT, L
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (01): : 173 - &
  • [8] AUGER RECOMBINATION IN GERMANIUM
    HULDT, L
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 24 (01): : 221 - 229
  • [9] LUMINESCENCE PROFILES OF LARGE ELECTRON-HOLE DROPS IN STRESSED GERMANIUM
    JEFFRIES, CD
    WOLFE, JP
    KELSO, SM
    MARKIEWICZ, RS
    FURNEAUX, JE
    [J]. JOURNAL OF LUMINESCENCE, 1976, 12 (01) : 659 - 663
  • [10] OBSERVATION OF ELECTRON-HOLE LIQUID IN GAP
    SHAH, J
    LEHENY, RF
    HARDING, WR
    WIGHT, DR
    [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (20) : 1164 - 1167