CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON

被引：154

作者：

FOSSUM, JG

MERTENS, RP

LEE, DS

NIJS, JF

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 06期

关键词：

D O I：

10.1016/0038-1101(83)90173-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：569 / 576

页数：8

相关论文

共 41 条

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[8] CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION
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[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1281 - 1284
[9] AUGER RECOMBINATION WITH DEEP IMPURITIES IN INDIRECT BAND-GAP SEMICONDUCTORS
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