A PHYSICAL MODEL FOR THE DEPENDENCE OF CARRIER LIFETIME ON DOPING DENSITY IN NONDEGENERATE SILICON

[1] BLAIS PD, 1980, ASTM STP712 AM SOC T

[2] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[3] FISCHER H, 1973, 10TH REC IEEE PHOT S

[4] FISCHER H, 1975, 11TH REC IEEE PHOT S

[5] FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[6] FULLER CS, 1975, SEMICONDUCTORS

[7] CARRIER LIFETIME OF HEAT-TREATED SILICON-CRYSTALS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) : 281 - 298

[8] GRAFF K, 1980, ASTM STP712 AM SOC T

[9] Graff K., 1979, TOPICS APPL PHYS SOL, V31

[10] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[1] BLAIS PD, 1980, ASTM STP712 AM SOC T

[2] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[3] FISCHER H, 1973, 10TH REC IEEE PHOT S

[4] FISCHER H, 1975, 11TH REC IEEE PHOT S

[5] FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[6] FULLER CS, 1975, SEMICONDUCTORS

[7] CARRIER LIFETIME OF HEAT-TREATED SILICON-CRYSTALS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) : 281 - 298

[8] GRAFF K, 1980, ASTM STP712 AM SOC T

[9] Graff K., 1979, TOPICS APPL PHYS SOL, V31

[10] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387