CARRIER LIFETIME OF HEAT-TREATED SILICON-CRYSTALS

[1] ABE T, 1973, SEMICONDUCTOR SILICO, P95

[2] ATSARKIN VA, 1961, SOV PHYS-SOL STATE, V2, P1874

[3] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) : 255 - &

[4] AUGER-RECOMBINATION IN SI [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95

[5] QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1956, 103 (03): : 567 - 569

[6] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 277 - 279

[7] DEKOCK AJR, 1973, PHILIPS RES REPOR S1

[8] KINETICS AND EQUILIBRIA INVOLVING COPPER AND OXYGEN IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) : 438 - &

[9] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[10] GRAFF K, 1973, SEMICONDUCTOR SILICO, P170

[1] ABE T, 1973, SEMICONDUCTOR SILICO, P95

[2] ATSARKIN VA, 1961, SOV PHYS-SOL STATE, V2, P1874

[3] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) : 255 - &

[4] AUGER-RECOMBINATION IN SI [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95

[5] QUENCHED-IN RECOMBINATION CENTERS IN SILICON [J]. PHYSICAL REVIEW, 1956, 103 (03): : 567 - 569

[6] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 277 - 279

[7] DEKOCK AJR, 1973, PHILIPS RES REPOR S1

[8] KINETICS AND EQUILIBRIA INVOLVING COPPER AND OXYGEN IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) : 438 - &

[9] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[10] GRAFF K, 1973, SEMICONDUCTOR SILICO, P170