Hot carrier degradation in LDMOS power transistors

被引：10

作者：

Cheng, CC ^{[1
]}

Wu, JW ^{[1
]}

Lee, CC ^{[1
]}

Shao, JH ^{[1
]}

Wang, T ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2004年

关键词：

hot carrier; LDMOS; power device; impact ionization;

D O I：

10.1109/IPFA.2004.1345626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hot carrier performance of N-LDMOS and P-LDMOS transistors is evaluated. For N-LDMOS transistors, the drain current degradation is shown to be due to hot electron injection in the drift region field oxide (bird's beak edge). On the other hand, the hot carrier-damaged region of P-LDMOS transistors is within the channel region, and hot electron is also the source of degradation.

引用

页码：283 / 286

页数：4

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