Luminescence study of donors and acceptors in CdGeAS2

被引：12

作者：

Bai, LH

Schunemann, PG

Pollak, TM

Giles, NC

机构：

[1] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

[2] BAE Syst, Nashua, NH 03061 USA

来源：

OPTICAL MATERIALS | 2004年 / 26卷 / 04期

关键词：

CdGeAS(2); photoluminescence; nonlinear optical material;

D O I：

10.1016/j.optmat.2003.12.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A photoluminescence (PL) study has been performed on a set of p-type bulk single crystalline samples of CdGeAs2. At liquid-helium temperatures, a PL band peaking near 0.55 eV was observed in samples with enhanced absorption at 5.5 mum. This PL band was observed to vary as much as 40 meV in peak position in our sample set. The PL peak position depends on the net acceptor concentration (i.e., hole concentration) and the PL peak shifts to higher energy as the excitation intensity increases. We show that this behavior is well explained by the model of donor-acceptor pair (DAP) recombination in the presence of potential fluctuations. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：501 / 505

页数：5

共 14 条

[1]

AKIMCHENKO IP, 1973, SOV PHYS SEMICOND+, V7, P98

[2] Photoluminescence and infrared transmission spectroscopies of CdGeAs2 [J].