Photoluminescence and infrared transmission spectroscopies of CdGeAs2

被引：13

作者：

Aufgang, JB

Labrie, D

Olson, K

Paton, B

Simpson, AM

Iseler, GW

Borshchevsky, A

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] CALTECH,JET PROP LAB,PASADENA,CA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 10期

关键词：

D O I：

10.1088/0268-1242/12/10/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first detailed photoluminescence (PL) study of as-grown CdGeAs2 samples obtained from three different sources is presented. The study was carried out in the 5-100 K temperature range and laser excitation densities 0.5-5 W cm(-2) PL spectra collected on samples from all sources showed a PL band near 355 meV which is assigned to an (e, A(0)) transition to the deep native double acceptor 315 meV above the valence band edge. Samples from one source which contained substantially lower levels of oxygen also had about an order of magnitude lower values of absorption coefficient below the band gap and showed also a single PL band in their PL spectra.

引用

页码：1257 / 1264

页数：8

共 21 条

[1]

AKIMCHENKO IP, 1973, SOV PHYS SEMICOND+, V7, P98

[2]

BORSHCHEVSKII AS, 1969, SOV PHYS SEMICOND+, V2, P1145

[3] EFFECTS OF HEAT PRETREATMENT OF STARTING MATERIALS ON THE OPTICAL TRANSPARENCY OF CDGEAS2 CRYSTALS [J].