An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

被引：5

作者：

Chindalore, G ^{[1
]}

Shih, WK ^{[1
]}

Jallepalli, S ^{[1
]}

Hareland, SA ^{[1
]}

Tasch, AF ^{[1
]}

Maziar, CM ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 03期

关键词：

accumulation quantization; capacitance; electrical oxide thickness; heavy doping; potential wells;

D O I：

10.1109/16.824741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents for the first time experimental results for the extraction of the increase in the effective electrical oxide thickness (Delta(tox) = t(ox, expt) - t(ox, physical)) in MOS accumulation layers with heavily doped sudstrates due to quantum mechanical (QM) effects, using experimentally measured MOS capacitance-voltage (C-V) characteristics and experimentally verified fullband self-consistent calculations. In addition, the fullband self-consistent simulations have been extended to accumulation regions, and the experimental results for the accumulation region have been compared with simulations, It has been shown that at moderate to high doping levels, Delta t(ox) is as much as 0.4 to 0.5 nm for both electrons and holes, whereas for very high doping levels (> 1 X 10(19) cm(-3)) Delta t(ox) approaches zero. Thus, the experimental accumulation cm capacitance is predicted sufficiently well by the classical analysis itself.

引用

页码：643 / 646

页数：4

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