First-principles study of electronic structure in α-(BEDT-TTF)2I3 at ambient pressure and with uniaxial strain

被引:127
作者
Kino, H [1 ]
Miyazaki, T [1 ]
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
关键词
alpha-(BEDT-TTF)(2)I-3; first-principles study; Dirac cone dispersion; tight-binding model; carrier density;
D O I
10.1143/JPSJ.75.034704
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Within the framework of the density functional theory, we calculate the electronic structure of a(BEDT-TTF)(2)I-3 at 8 K and room temperature at ambient pressure and with uniaxial strain along the a- and b-axes. We confirm the existence of anisotropic Dirac cone dispersion near the chemical potential. We also extract the orthogonal tight-binding parameters to analyze physical properties. An investigation of the electronic Structure near the chemical potential clarifies that effects of uniaxial strain along the a-axis is different from that along the b-axis. The carrier densities show T-2 dependence at low temperatures, which may explain the experimental findings not only qualitatively but also quantitatively.
引用
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页数:8
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