Distinct orientation of AlN thin films deposited on sapphire substrates by laser ablation

被引：14

作者：

Meinschien, J ^{[1
]}

Falk, F ^{[1
]}

Hergt, R ^{[1
]}

Stafast, H ^{[1
]}

机构：

[1] Inst Phys Hochtechnol, D-07702 Jena, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 02期

关键词：

D O I：

10.1007/s003390050035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystalline, 50-1200 nm thick aluminum nitride (AlN) films were deposited on sapphire by laser ablation of sintered AlN targets. On c-, r-, m-, and a-cut sapphire the AlN films were (00.1), (11.0), (10.0), and (00.1) oriented, respectively. X-ray diffraction goniometry revealed the inplane orientation of AlN on c-, r-, and m-cut sapphire to be c: AlN[1000]parallel to Al2O3 [2100], r:AlN[2010]parallel to Al2O3[1000], and m: AlN[0100]parallel to Al2O3 [0001]. TEM showed a smooth surface of AlN(11.0) grown on r-cut sapphire in contrast to a rough surface and columnar structure of AlN(00.1) films on c-cut sapphire. AFM revealed atomically flat films at initial stages of film growth independent of the substrate orientation. Thick AlN films on c-cut sapphire were rough whereas those on r-cut sapphire remained smooth up to 1 mu m thickness with a rms-roughness as low as 1 nm.

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页码：215 / 218

页数：4

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