Auger recombination as a probe of the Mott transition in semiconductor nanocrystals

被引：12

作者：

Nemec, P

Maly, P ^{[1
]}

Nikl, M

Nitsch, K

机构：

[1] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague, Czech Republic

[2] Acad Sci Czech Republic, Inst Phys, CR-16200 Prague, Czech Republic

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on picosecond dynamics of photoexcited carriers in CsPbCl3 nanocrystals in a CsCl host. For low carrier densities, photoexcited carriers form excitons, which decay with a characteristic time constant of 170 ps at 300 K. Under strong photoexcitation, we have observed the Auger recombination with the Auger coefficient C approximate to 10(-29) cm(6) s(-1). We have identified the onset of the Auger recombination at the carrier densities of approximate to 10(20) cm(-3) as the Mott-like transition from excitons to electron-hole plasma in nanocrystals. (C) 2000 American Institute of Physics. [S0003-6951(00)02520-1].

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页码：2850 / 2852

页数：3

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