Auger recombination as a probe of the Mott transition in semiconductor nanocrystals

被引:12
作者
Nemec, P
Maly, P [1 ]
Nikl, M
Nitsch, K
机构
[1] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague, Czech Republic
[2] Acad Sci Czech Republic, Inst Phys, CR-16200 Prague, Czech Republic
关键词
D O I
10.1063/1.126494
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on picosecond dynamics of photoexcited carriers in CsPbCl3 nanocrystals in a CsCl host. For low carrier densities, photoexcited carriers form excitons, which decay with a characteristic time constant of 170 ps at 300 K. Under strong photoexcitation, we have observed the Auger recombination with the Auger coefficient C approximate to 10(-29) cm(6) s(-1). We have identified the onset of the Auger recombination at the carrier densities of approximate to 10(20) cm(-3) as the Mott-like transition from excitons to electron-hole plasma in nanocrystals. (C) 2000 American Institute of Physics. [S0003-6951(00)02520-1].
引用
收藏
页码:2850 / 2852
页数:3
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