First-principles modeling of resistance switching in perovskite oxide material

被引：100

作者：

Jeon, Sang Ho

Park, Bae Ho ^{[1
]}

Lee, Jaichan

Lee, Bora

Han, Seungwu

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143091, South Korea

[2] Sungkyunkwan Univ, Dept Mat Sci & Engn, Suwon 440746, South Korea

[3] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.2234840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a first-principles study on SrRuO3/SrTiO3 interface in the presence of the oxygen vacancy. While the oxygen vacancy on the side of SrTiO3 significantly lowers the Schottky barrier height, the oxygen vacancy close to the interface or inside the metallic electrode results in a Schottky barrier comparable to that of the clean interface. Based on these results, we propose a model for resistance-switching phenomena in perovskite oxide/metal interfaces where electromigration of the oxygen vacancy plays a key role. Our model provides a consistent explanation of a recent experiment on resistance switching in SrRuO3/Nb:SrTiO3 interface. (c) 2006 American Institute of Physics.

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