Interface-phonon-assisted transitions in quantum-well lasers

被引:36
作者
Stroscio, MA
机构
[1] U.S. Army Research Office, RTP, NC 27709-2211
关键词
D O I
10.1063/1.363754
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interface-phonon-assisted transitions an shown to be important in determining the rates for bound-bound transitions as well as the optimum quantum-well parameters for recently proposed quantum-well lasers including the tunneling injection laser and the quantum cascade laser. In particular, it is demonstrated through the use of the dielectric continuum model for interface and confined phonons that the exploitation of interface-phonon-assisted transitions offers a means of maximizing key transition rates and thus of optimizing the performance of both the tunnel injection laser and the quantum cascade laser.
引用
收藏
页码:6864 / 6867
页数:4
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